发明名称 |
Thicker oxide formation at the trench bottom by selective oxide deposition |
摘要 |
A trench MOSFET is formed by creating a trench in a semiconductor substrate, then forming a barrier layer over a portion of the side wall of the trench. A thick insulating layer is deposited in the bottom of the trench. The barrier layer is selected such that the thick insulating layer deposits in the bottom of the trench at a faster rate than the thick insulating layer deposits on the barrier layer. Embodiments of the present invention avoid stress and reliability problems associated with thermal growth of insulating layers, and avoid problems with control of the shape and thickness of the thick insulating layer encountered when a thick insulating layer is deposited, then etched to the proper shape and thickness.
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申请公布号 |
US6709930(B2) |
申请公布日期 |
2004.03.23 |
申请号 |
US20020176570 |
申请日期 |
2002.06.21 |
申请人 |
SILICONIX INCORPORATED |
发明人 |
CHAN BEN;LUI KAM HONG;YUE CHRISTIANA;WONG RONALD;CHANG DAVID;GILES FREDERICK P.;TERRILL KYLE;DARWISH MOHAMED N.;PATTANAYAK DEVA;XU ROBERT Q.;CHEN KUO-IN |
分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/423;H01L29/78;(IPC1-7):H01L21/336;H01L21/320 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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