| 摘要 |
A semiconductor laser device includes an n-GaN substrate as a first semiconductor layer, a layered lump of hexagonal nitride-based semiconductor layers provided as a second semiconductor layer on an upper side of the first semiconductor layer, a mirror end face formed by cleavage such that both of the n-GaN substrate and layered lump have their side surfaces exposed on the approximately same plane, and a buffer layer provided between the n-GaN substrate and the layered lump. On the mirror end face, the value of an average roughness of an exposed portion of the layered lump is a half or lower compared to an average roughness of an exposed portion of the n-GaN substrate.
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