| 摘要 |
PROBLEM TO BE SOLVED: To provide a multilayer type tin film device having high quality and high reliability by realizing a stable film deposition without being affected by thermal catalysts or hardly being affected thereby. SOLUTION: In the production apparatus for a thin film device where at least two layers are successively stacked on a substrate 29 to be film-deposited by a hot wire CVD (Chemical Vapor Deposition) method, to the components of a heating element used for the film deposition of a primary thin film, the components of a heating element used for the film deposition of the subsequent thin film are differentiated. COPYRIGHT: (C)2004,JPO
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