发明名称 |
FIN FET DEVICES FROM BULK SEMICONDUCTOR AND METHOD FOR FORMING |
摘要 |
The present invention thus provides a device structure and method for forming fin (210) Field Effect Transistors (FETs) from bulk semiconductor wafers (200) while providing improved wafer to wafer device uniformity. Specifically, the invention provides a height control layer (212), such as a damaged portion of the substrate (200) or a marker layer, which provides uniformity of fin height. Additionally, the invention provides provides isolation (214) between fins (210) which also provides for optimization and narrowing of fin width by selective oxidation of a portion (212) of the substrate relative to an oxidized portion (216) of the fin sidewalk. The device structure and methods of the present invention thus provide the advantages of uniform finFET fabrication while using cost effect bulk wafers. |
申请公布号 |
WO03103019(A3) |
申请公布日期 |
2004.03.18 |
申请号 |
WO2003US17269 |
申请日期 |
2003.06.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FRIED, DAVID, M.;NOWAK, EDWARD, J.;RAINEY, BETH, ANN;SADANA, DEVENDRA, K. |
分类号 |
H01L27/088;H01L21/265;H01L21/336;H01L21/8234;H01L21/8238;H01L29/78;H01L29/786 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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