| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a metal oxide film and a metal nitride film having high crystallinity and stable composition. SOLUTION: A gaseous chlorine plasma and gaseous oxygen plasma are generated within a chamber 1 by supplying gaseous raw materials containing gaseous chlorine, and gaseous oxygen from a nozzle 12 and acting electromagnetic waves from a plasma antenna 9. A member 7 to be etched is etched by these gaseous plasmas to form a first precursor consisting of an Hf (halfnium) component and the gaseous chlorine and a second precursor consisting of the Hf component and the gaseous oxygen. Further, HfO<SB>2</SB>which is the second precursor is deposited by disposing a temperature difference between the member 7 to be etched and a substrate 3. The thin HfO<SB>2</SB>film is deposited on the substrate 3 by oxidizing the HfCl<SB>2</SB>which is the first precursor by the gaseous oxygen plasma to form HfO<SB>2</SB>, then oxidizing the HfCl<SB>2</SB>which is the first precursor after the adsorption on the substrate 3 to form the HfO<SB>2</SB>, or oxidizing the Hf component which is the first precursor after the deposition thereof on the substrate to form the HfO<SB>2</SB>. COPYRIGHT: (C)2004,JPO
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