HIGH RESISTOR SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To manufacture a high resistance silicon wafer whose gettering performance and economical efficiency are excellent, capable of effectively suppressing the generation of an oxygen thermal donor by thermal treatment for circuit formation performed at a device maker side. SOLUTION: In a high resistance/low oxygen silicon wafer whose resistivity value is 100(Ωcm) or more, and whose oxygen concentration is 12×1017atoms/cm3(ASTM F-121, 1979) or less, boron is ion-injected with 1×1014to 1×1016/cm2dose below a device formation region so that a high concentration boron layer can be formed. Then, the generation of the oxygen thermal donor is suppressed by low oxygenation. The generation of an oxygen deposit(BMD) is suppressed, and gettering performance is ensured without depending on this. COPYRIGHT: (C)2004,JPO