Ferroelectric memory and method for driving the same

摘要

A capacitor has storage node that is connected to a pass transistor connected to a sub-bit line. The gate, drain and source of a gain transistor are connected to sub-bit line, bit line and source line respectively. A charging device charges the voltage of the sub-bit line to threshold voltage of the gain transistor, or voltage value by adding offset of threshold. An independent claim is also included for method for driving a semiconductor storage device.