发明名称 SEMICONDUCTOR MEMORY DEVICE AND SENSE AMPLIFIER THEREOF
摘要 PURPOSE: A semiconductor memory device and a sense amplifier thereof are provided to improve the reliability by stabilizing an operation under low voltage. CONSTITUTION: A semiconductor memory device includes a memory cell array, a predischarge circuit, an input/output gate circuit, and a sense amplifier. The memory cell array includes a plurality of memory cells connected between a plurality of word lines and a plurality of bit lines. The predischarge circuit predischarges the bit lines in a predischarging operation. The input/output gate circuit transmits data between the bit lines and the data lines in a read operation. The sense amplifier includes a bias circuit(30) for biasing the data lines to bias voltage levels and a sense amplifier circuit(32) for generating a sense output signal by amplifying the bias voltage level.
申请公布号 KR20040022674(A) 申请公布日期 2004.03.16
申请号 KR20020054289 申请日期 2002.09.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, SEUNG HO
分类号 G11C16/06;G11C7/06;G11C7/10;G11C7/12;(IPC1-7):G11C7/06 主分类号 G11C16/06
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