发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND SENSE AMPLIFIER THEREOF |
摘要 |
PURPOSE: A semiconductor memory device and a sense amplifier thereof are provided to improve the reliability by stabilizing an operation under low voltage. CONSTITUTION: A semiconductor memory device includes a memory cell array, a predischarge circuit, an input/output gate circuit, and a sense amplifier. The memory cell array includes a plurality of memory cells connected between a plurality of word lines and a plurality of bit lines. The predischarge circuit predischarges the bit lines in a predischarging operation. The input/output gate circuit transmits data between the bit lines and the data lines in a read operation. The sense amplifier includes a bias circuit(30) for biasing the data lines to bias voltage levels and a sense amplifier circuit(32) for generating a sense output signal by amplifying the bias voltage level.
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申请公布号 |
KR20040022674(A) |
申请公布日期 |
2004.03.16 |
申请号 |
KR20020054289 |
申请日期 |
2002.09.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, SEUNG HO |
分类号 |
G11C16/06;G11C7/06;G11C7/10;G11C7/12;(IPC1-7):G11C7/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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