发明名称 |
Method for making spectrally efficient photodiode structures for CMOS color imagers |
摘要 |
A method for making an array of photodiodes with more uniform optical spectral response for the red, green, and blue pixel cells on a CMOS color imager is achieved. After forming a field oxide on a substrate to electrically isolate device areas for CMOS circuits, an array of deep N doped wells is formed for photodiodes for the long wavelength red pixel cells. An array of P doped well regions is formed adjacent to and interlaced with the N doped wells. Shallow diffused N<+ >regions are formed within the P doped wells for the shorter wavelength green and blue color pixels cells. The shallow diffused photodiodes improve the quantum efficiency (QE), and provide a color imager with improved color fidelity. An insulating layer and appropriate dye materials are deposited and patterned over the photodiodes to provide the array of color pixel cells. The N and P doped wells are also used for the supporting FET CMOS circuits to provide a cost-effective manufacturing process.
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申请公布号 |
US6707080(B2) |
申请公布日期 |
2004.03.16 |
申请号 |
US20020320296 |
申请日期 |
2002.12.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
WANG CHING-CHUN;YAUNG DUN-NIAN;TSENG CHIEN-HSIEN;WUU SHOU-GWO |
分类号 |
H01L27/146;(IPC1-7):H01L31/062;H01L27/148;H01L31/00;H01L31/06;H01L21/00 |
主分类号 |
H01L27/146 |
代理机构 |
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