RESIST PATTERN THICKENING MATERIAL, METHOD FOR MANUFACTURING RESIST PATTERN, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a resist pattern thickening material etc., which have no dependence of resist patterns on materials and sizes, thickness of the resist pattern increases uniformly and stably in the state of reducing the roughness of surface, and can form a fine resist drop-out pattern exceeding the exposure threshold of a light source in an exposure device used during patterning.

SOLUTION: The resist pattern thickening material contains a resin, a crosslinking agent and a nitrogenous compound. The method for manufacturing the resist patterns includes a process of forming thickened resist patterns by applying the resist pattern thickening material on the surface of the resist patterns after forming the resist patterns. The method for manufacturing semiconductor devices further includes a step of manufacturing the thickened resist patterns by forming the resist patterns on an underlayer and then applying the thickening material on the surfaces of the resist patterns thereby thickening the resist patterns, and a step of patterning the underlayer by etching using the thickened resist patterns.

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