| 摘要 |
Disclosed is an avalanche phototransistor capable of being used as a photo detector of high performance. The avalanche phototransistor comprises an emitter photoabsorption layer having a function to detect an infrared light, a thin avalanche-gain layered-structure including a charge layer and a multiplication layer having a thickness of 5,000 Å or less, and a hot electron transition layer. The avalanche phototransistor employs a three-terminal structure which consists of an emitter, a base and a collector. Even if a lower voltage than that of an avalanche photodiode is applied to the avalanche phototransistor, high gain can be obtained and sensitivity of the phototransistor can be increased. High current, high output and high operation speed can be accomplished using a hot electron effect. Further, stability of elements and reliance can be increased, and multiple operation functions can be obtained due to the increased number of terminals.
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