| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of micropattern formation using a silicon oxide film. SOLUTION: A photoresist pattern is formed on a material film on which a micropattern is formed. A silicon oxide film, which must be thin and conformal, is deposited on the photoresist pattern without damaging the underlying photoresist pattern. Next, dry etching is performed on a bottom film. At a first stage of dry etching, a spacer is formed on the side wall of the photoresist pattern, then a polymer film is formed on the photoresist pattern. This method avoids the thinning phenomenon of the photoresist pattern to maintain an etching profile and to prevent phenomena such as striation and wiggling from occurring in the patterned film. COPYRIGHT: (C)2004,JPO |
