| 发明名称 |
Method for manufacturing semiconductor device |
| 摘要 |
A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.
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| 申请公布号 |
US2004048477(A1) |
申请公布日期 |
2004.03.11 |
| 申请号 |
US20030658393 |
申请日期 |
2003.09.10 |
| 申请人 |
SAITO GO;ISHIMURA HIROAKI;KUDOH YUTAKA;SAKAGUCHI MASAMICHI;TAKATA KAZUO |
发明人 |
SAITO GO;ISHIMURA HIROAKI;KUDOH YUTAKA;SAKAGUCHI MASAMICHI;TAKATA KAZUO |
| 分类号 |
H01L21/3065;H01L21/308;H01L21/762;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/3065 |
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