发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which does not require any refresh while the main storage portion is formed of a capacitor which accumulates charges as the binary-level information and an access transistor for controlling input and output of charges to and from the capacitor. <P>SOLUTION: The semiconductor storage device comprises the capacitor which holds charges depending on a logical level of the storage information expressed with the binary-level information and includes a storage node, the access transistor for controlling input and output of charges accumulated in the capacitor, and a latch circuit which is located on the semiconductor substrate to maintain a potential of the storage node of the capacitor. At least one of the circuit elements structuring the latch circuit is located at the upper part of the access transistor. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004079696(A) |
申请公布日期 |
2004.03.11 |
申请号 |
JP20020236332 |
申请日期 |
2002.08.14 |
申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
KOGA TAKESHI;ISHIGAKI YOSHIYUKI;ASHIDA MOTOI;MAKI YUKIO;FUJII YASUHIRO;HOSOKAWA TOMOHIRO;TERADA TAKASHI;IDEI MAKOTO;MASUDA TAIICHI |
分类号 |
H01L27/108;G11C11/402;G11C11/412;H01L21/8242;H01L21/8244;H01L27/11 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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