| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a negative type resist composition through which performance improvement technology in the microfabrication of semiconductor elements is provided using high energy rays and high sensitivity, high resolution, good pattern shapes and good line edge roughness are simultaneously satisfied while using electron beams or ion beams. <P>SOLUTION: The composition includes (A) alkaline solubility polymer, (B) cross-linker which cross links with the polymer by the effect of acid and (C) a compound which includes a phenacyl sulfonium structure that generates acid by the irradiation of activating light beams or radioactive rays. <P>COPYRIGHT: (C)2004,JPO |
