| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor fabricating process for excluding certainly surges entering a protecting MIS transistor with a fundamental structure and a process that are held in common between the protecting MIS transistor and the other MIS transistor. SOLUTION: A mask for forming a high concentration source and drain region (7a, 7b) and then shadows of a gate electrode (4) and side wall (5) are utilized to control an implantation angle, so that high concentration well regions (10a, 10b) are formed by an ion implantation. In processes for forming the high concentration source and drain regions (7a, 7b), as the high concentration well regions (10a, 10b) can be formed, the protecting MIS transistor can be formed compatibly with preventing increase in cost and deterioration in transistor characteristics without increase in lithography processes and in the number of masks. COPYRIGHT: (C)2004,JPO
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