BLT FERRODIELECTRIC THIN FILM CAPACITOR AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a BLT ferrodielectric thin film to be used for various devices such as a nonvolatile memory utilizing the ferrodielectric material characteristic and a method of manufacturing the same to stably and easily obtain the BLT ferrodielectric material phase. SOLUTION: The BLT ferrodielectric thin film capacitor is formed by forming, on a semiconductor substrate, at least a close contact layer (A) consisting of a metal thin film having oxygen affinity, a lower electrode layer (B) consisting of a metal thin film or an oxide thin film having electric conductivity, a perovskite BLT ferrodielectric thin film layr (C) of the Bi-system layer and an upper electrode layer (D) consisting of a metal thin film or oxide thin film having electric conductivity. This BLT ferrodielectric thin film capacitor is characterized in that pyrochlore phase in the perovskite BLT ferrodielectric thin film (C) of the Bi-system layer is not substantially formed by reducing the oxygen affinity of the close contact layer (A) and the BLT crystal is not substantially aligned in the c-axis direction. COPYRIGHT: (C)2004,JPO