| 摘要 |
PROBLEM TO BE SOLVED: To improve an insulating film in evenness and satisfy its gap-filling properties. SOLUTION: A silicon oxide film 3 is formed on a polycrystalline silicon gates 2 through a high-density plasma CVD method so as to fill up a deep gap between the polycrystalline silicon gates 2, a silicon oxide film 4 is formed on the silicon oxide film 3 through a plasma CVD method using a TEOS gas, and the surface of the silicon oxide film 4 is flattened through a CMP method. COPYRIGHT: (C)2004,JPO
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