| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a MOS transistor capable of controlling a reverse narrow effect and a narrow effect. SOLUTION: The semiconductor device comprises an element isolating field oxide film 5 formed on a semiconductor substrate 1, a channel stopper region 9 formed beneath the field oxide film 5, and the MOS transistor electrically isolated from the field oxide film 5 and the channel stopper region 9. The semiconductor device further comprises a narrow effect controlling impurity region 7 near both ends of a channel region in a channel widthwise direction of the MOS transistor, and a high-concentration impurity region 11 having an impurity concentration of the same degree as the channel stopper region 9 at a deeper position than the narrow effect controlling impurity region 7. COPYRIGHT: (C)2004,JPO
|
