| 摘要 |
PROBLEM TO BE SOLVED: To form a uniform film on the rear surface of an extremely thin semiconductor wafer of which the thickness is≤100μm. SOLUTION: On the support plane of a supporting substrate 10 having the flat support plane, the surface of a semiconductor wafer W is supported to integrate the supporting substrate 10 and the semiconductor wafer W, the rear surface of the semiconductor wafer W integrated with the supporting substrate 10 is polished or etched to perform thinning work by using a thinning apparatus. and a film is then formed on the rear surface of the semiconductor wafer W integrated with the supporting substrate 10 by using a film forming apparatus 40. The semiconductor wafer W is integrated with the supporting substrate, because even the semiconductor wafer formed thin with a thickness of≤100μm is not warped, the film can be uniformly formed. COPYRIGHT: (C)2004,JPO |
