发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A fluorine-containing organic film having a relative dielectric constant of 4 or less is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. During the deposition of the fluorine-containing organic film, a scavenger gas for scavenging fluorine constituting the fluorocarbon is mixed in the material gas. The proportion of the mixed scavenger gas in the material gas is changed to adjust the mechanical strength and relative dielectric constant of the fluorine-containing organic film.
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申请公布号 |
US6703711(B2) |
申请公布日期 |
2004.03.09 |
申请号 |
US20020330152 |
申请日期 |
2002.12.30 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
JIWARI NOBUHIRO;IMAI SHINICHI |
分类号 |
H01L21/31;H01L21/312;H01L21/314;H01L23/48;H01L23/52;H01L29/40;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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