| 摘要 |
PURPOSE: An MRAM(Magnetic Random Access Memory) cell is provided to restrain parasitic current by connecting a transistor or a diode to a magnetic tunnel junction. CONSTITUTION: A memory cell(8) includes a conductor clad(34) with ferromagnetic material(36), first and second spacer layers(16,24) on opposite sides of the clad conductor, a first data layer(12) on the first spacer layer, and a second data layer(22) on the second spacer layer. The coercivity of the first and second data layers(12,22) is higher than that of the conductor clad(34).
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