| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such problems that breaking at a level difference in wiring occurs since wiring patterns formed on a substrate cross each other via an insulating layer, and manufacturing costs is increased by forming the wiring section in a semiconductor device array in multiple layers. <P>SOLUTION: In the wiring pattern formed on the substrate, a common electrode 16 for performing ohmic contact with a GaAs contact layer 6 under an interlayer dielectric is electrically connected to an individual electrode 14 via a semiconductor layer. Between them, common wiring 18 formed on the interlayer dielectric is provided, thus preventing the wiring patterns from crossing each other on the interlayer dielectric. <P>COPYRIGHT: (C)2004,JPO |
