| 发明名称 |
Method for fabricating a gate structure of a field effect transistor |
| 摘要 |
A method for fabricating features on a substrate having reduced dimensions. The features are formed by defining a first mask on regions of the substrate. The first mask is defined using lithographic techniques. A second mask is then conformably formed on one or more sidewalls of the first mask. The features are formed on the substrate by removing the first mask and then etching the substrate using the second mask as an etch mask.
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| 申请公布号 |
US2004043623(A1) |
申请公布日期 |
2004.03.04 |
| 申请号 |
US20030463460 |
申请日期 |
2003.06.16 |
| 申请人 |
LIU WEI;LILL THORSTEN B.;MUI DAVID S.L.;BENCHER CHRISTOPHER DENNIS |
发明人 |
LIU WEI;LILL THORSTEN B.;MUI DAVID S.L.;BENCHER CHRISTOPHER DENNIS |
| 分类号 |
H01L21/033;H01L21/28;H01L21/311;H01L21/3213;H01L21/336;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/033 |
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