Infrared sensor device and manufacturing method thereof

摘要

A supporting beam line (80) for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel (20) comprising an infrared absorption portion (23) for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion (21) for converting a temperature change caused by the heat generated in the infrared absorption portion (23) into an electric signal is formed by a damascene metal (70) on the same layer as the gate (66) of a damascene metal gate MOS transistor (61) to be used in a peripheral circuit. The supporting beam line (80) comprises a conductor line with U-shaped cross section (81) inside which a metal is filled.