Silicon carbide semiconductor device used in electronics comprises a silicon carbide substrate having an error-aligned surface with a specified outer axial direction

摘要

Silicon carbide semiconductor device comprises a silicon carbide substrate (10) having an error-aligned (0001) surface with an outer axial direction (11-20), and a trench (11) formed on the substrate and having a strip structure extending in a (11-20) direction. An epitaxial layer made from silicon carbide is formed on the inner surface of the trench. Independent claims are also included for alternative silicon carbide semiconductor devices.