| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having structure free from short-circuit of a pad conduct and a gate wiring and that of pad contacts with each other. <P>SOLUTION: The method of manufacturing the semiconductor device is provided with a step for forming a gate protection film 5 which covers the top face and a side face of a gate electrode 4 on the main surface 1a of a silicon substrate 1, a step for forming an interlayer dielectric 14 easier to etch than the film 5, a step for removing the dielectric 14 until the top face of the film 5 is exposed, a step for forming a pad contact hole 19 by etching the dielectric 14 and the film 5 with a resist film as a mask by using a prescribed etchant, a step for forming a conductive film, and a step for forming the pad contacts 21 by making a part of the conductive film in the pad contact hole 19 and removing the other part of the conductive film. <P>COPYRIGHT: (C)2004,JPO |
