发明名称 |
Method of wafer bumping for enabling a stitch wire bond in the absence of discrete bump formation, and method of forming semiconductor device assembly including same |
摘要 |
A method of bumping a wafer for facilitating bonding of bond wires to elevate the bond location above the passivation layer. The wafer is bumped by disposing the wafer in at least one electroless bath having a nickel-containing solution therein, wherein bumps having a nickel-containing material are formed simultaneously on the exposed bond pads to an elevation sufficient to prevent damage to a passivation layer surrounding the bond pads by contact of a wire bonding capillary. A gold or palladium cap may optionally be formed over the nickel-containing material of the bumps. A method of forming a semiconductor device assembly is also disclosed.
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申请公布号 |
US2004036156(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20030413977 |
申请日期 |
2003.04.15 |
申请人 |
FARNWORTH WARREN M.;BROOKS JERRY M. |
发明人 |
FARNWORTH WARREN M.;BROOKS JERRY M. |
分类号 |
H01L21/288;H01L21/60;H01L23/485;(IPC1-7):H01L23/02 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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