| 摘要 |
<p>An integrated circuit having a non-volatile HGRAM cell includes a first section (2) having impurity materials implanted into a substrate (16) to form NPN transistor regions (18, 20) and a second section having (14) a gate structure to control the currents conducted in the NPN transistor regions. The gate structure (14) is formed at least above the P-type channel region of the substrate and includes an hourglass shaped material with gates to control the movement of holes through the restricted portion of the hourglass.</p> |
