| 摘要 |
PROBLEM TO BE SOLVED: To prevent factors of causing wiring crack, void and broken line in the formation of a wiring at an upper layer part of metallic wires by eliminating a step difference of an inter-layer insulation film covering the metallic wires in the case of forming the metallic wires made of a thick aluminum film on a semiconductor substrate. SOLUTION: A barrier metallic layer and an aluminum film are formed as a first layer on the semiconductor substrate by sputtering or CVD to form aluminum wires through selective etching by using a resist mask and a reactant gas. The inter-layer insulation film is formed on the aluminum wires, an embedding film is coated on a step difference to fill in the step difference, and etch-back is applied to them by using the reactant gas to expose the upper part of the first layer aluminum wires. The aluminum film is similarly formed as second layer aluminum wires in this state, the resist is drawn in a way that the second layer aluminum wires are overlapped on the first layer aluminum wires by using a resist film for a mask, and the first layer aluminum wires and the second layer aluminum wires are joined at the same time the second layer aluminum wires are formed through selective etching by using the reactant gas. COPYRIGHT: (C)2004,JPO
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