| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring substrate for mounting a semiconductor device for realizing a higher density and a finer wiring in order to cope with the increase in the number of and the tendency toward narrower pitches of terminals of a semiconductor device, and a narrower pitch of an external electrode in order to cope with the tendency toward more compact and higher density systems, and excellent in mounting reliability. SOLUTION: The wiring substrate for mounting a semiconductor device is configured so as to comprise an insulating layer, which is a single layer, a wire provided on the top of the insulating layer, an electrode provided on the bottom of the insulating layer in such a way that at least the circumferential side of the top end of the electrode comes into contact with the insulating layer and at the same time, as least the bottom of the electrode does not come into contact with the insulating layer, and the bottom end of the electrode protrudes from the bottom of the insulating layer, a via located on the top of the electrode and provided within the insulating layer so as to bring the electrode and the wire into conduction, and a support body provided on the surface of the insulating layer. COPYRIGHT: (C)2004,JPO |
