COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR IMAGE SENSOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a complementary-metal-oxide-semiconductor(CMOS) image sensor is provided to prevent a crystal defect and etch damage caused by an ion implantation process and a dry etch process by forming a floating diffusion region which is formed by using a diffusion phenomenon of the impurities included in a gate conductive layer for forming a gate electrode. CONSTITUTION: The CMOS image sensor includes a reset transistor and a select transistor. A gate insulation layer is formed on a semiconductor substrate(100). The gate insulation layer is patterned to form a gate insulation layer pattern(125) with an opening exposing the semiconductor substrate in a predetermined region. The gate conductive layer is formed on the semiconductor substrate including the gate insulation layer pattern. The gate conductive layer is patterned to form a plurality of gate conductive layer patterns(135) wherein one of the gate conductive layer patterns crosses the opening.