发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of reducing an empty space and suppressing area loss. <P>SOLUTION: The semiconductor memory device is equipped with a memory cell array including a plurality of memory cell rows and at least one redundancy memory cell row, a redundancy rescue signal generation circuit for generating a redundancy rescue signal for showing an address of the defective memory cell row, and a row decoder for receiving a row address signal for indicating the memory cell row including the memory cell to be accessed and selecting the redundancy memory cell row in accordance with the redundancy rescue signal generated by the redundancy rescue signal generation circuit. The redundancy rescue signal generation circuit is arranged so that it faces the decoder across the memory array. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004062999(A) 申请公布日期 2004.02.26
申请号 JP20020220242 申请日期 2002.07.29
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HATANAKA ICHIRO;YAMAGAMI YOSHINOBU;SHIBAYAMA AKINORI
分类号 G11C11/413;G11C5/02;G11C29/00;G11C29/04;H01L21/82;H01L21/8242;H01L21/8244;H01L27/108;H01L27/11 主分类号 G11C11/413
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