发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of reducing an empty space and suppressing area loss. <P>SOLUTION: The semiconductor memory device is equipped with a memory cell array including a plurality of memory cell rows and at least one redundancy memory cell row, a redundancy rescue signal generation circuit for generating a redundancy rescue signal for showing an address of the defective memory cell row, and a row decoder for receiving a row address signal for indicating the memory cell row including the memory cell to be accessed and selecting the redundancy memory cell row in accordance with the redundancy rescue signal generated by the redundancy rescue signal generation circuit. The redundancy rescue signal generation circuit is arranged so that it faces the decoder across the memory array. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004062999(A) |
申请公布日期 |
2004.02.26 |
申请号 |
JP20020220242 |
申请日期 |
2002.07.29 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HATANAKA ICHIRO;YAMAGAMI YOSHINOBU;SHIBAYAMA AKINORI |
分类号 |
G11C11/413;G11C5/02;G11C29/00;G11C29/04;H01L21/82;H01L21/8242;H01L21/8244;H01L27/108;H01L27/11 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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