发明名称 |
SUBSTRATE DEVICE, MANUFACTURING METHOD THEREOF, ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS |
摘要 |
PURPOSE: A substrate device, a manufacturing method thereof, an electro-optical device and an electronic apparatus are provided to maintain favorable transistor characteristics over a long period. CONSTITUTION: A TFT(Thin Film Transistor) and a capacitor are formed on a substrate(200). The TFT contains a semiconductor layer(202). The capacitor has the first electrode(216) electrically connected to a part of the semiconductor layer, the second electrode(218) disposed to face the first electrode, and a dielectric film disposed between the first and second electrodes and containing a nitride film(208B). The capacitor is formed on the TFT. The nitride film has an opening(208BM) through which the semiconductor layer is seen in the top view. When the opening is utilized, the semiconductor layer is hydrogenated effectively. |
申请公布号 |
KR20040016798(A) |
申请公布日期 |
2004.02.25 |
申请号 |
KR20030056894 |
申请日期 |
2003.08.18 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
IKI TAKUNORI;HAYASHI TOMOHIKO |
分类号 |
G02F1/1368;G02F1/136;H01L21/336;H01L21/77;H01L27/12;H01L27/13;H01L27/146;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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