Semiconductor laser, manufacturing method thereof, semiconductor device and manufacturing method thereof

摘要

Semiconductor laser has a ridge shaped strip, made using III-V nitride compound semiconductor comprising a buried layer of AlxGa1-xAs (0=x=1) to bury opposite sides of the ridge-shaped stripe. Independent claims are also included for: (a) manufacturing a semiconductor laser by making the ridge shaped stripe and growing a buried semiconductor layer to bury opposite sides of the stripe; and (b) a semiconductor device which has a projection on a semiconductor base body.