发明名称 THIN FILM TRANSISTOR DISPLAY PANEL AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor display panel including a contact portion having excellent contact properties. <P>SOLUTION: A gate line is formed on an insulating substrate. A semiconductor layer is formed on an upper portion of a gate insulating film covering the gate line. A data line intersecting the gate line, and a drain electrode separated from the data line are formed on the upper portion. In this case, the data line and the drain electrode are positioned on a lower film so as to cover the lower film provided with a barrier metal layer and at least a portion of the drain electrodes, and include a top film consisting of aluminum or an aluminum alloy. Moreover, a protective coat is formed on the semiconductor layer, and the pixel electrode being in contact with the top film on the lower film of the exposed drain electrode and connected with the drain electrode is formed. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004056153(A) 申请公布日期 2004.02.19
申请号 JP20030277161 申请日期 2003.07.18
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM SANGSOO;KIM DONG-GYO
分类号 G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/417;H01L29/45;H01L29/786;(IPC1-7):H01L29/786;G02F1/136 主分类号 G02F1/1368
代理机构 代理人
主权项
地址