| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, having a high yield by preventing short circuit among wirings which are caused by seams generated in a wiring plug from occurring. SOLUTION: An interlayer insulating film 100, a lower layer wiring 101, and a first insulating film 102 are deposited on a semiconductor substrate. Then, a conductive film is deposited in a hole formed in the film 102, and a conductive film 103 overhanging from the hole is removed. Thereafter, the film 103 is heat-treated in the same chamber, and a second insulating film 105 is deposited on surfaces of the insulating film 102 and the conductive film 103. As a result, since the impurities mixed in the film 103 can be removed, the formation of a local thin film of the film 105 on an upper part of the hole can be prevented. Accordingly, even when a wiring layer is formed in the film 105, a short circuit between the wiring will not occur, and the semiconductor device can be manufactured at a high yield. COPYRIGHT: (C)2004,JPO
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