发明名称 POWER SEMICONDUCTOR, AND METHOD FOR PRODUCING THE SAME
摘要 The invention relates to a power semiconductor (1) which comprises a housing (2) with a first housing side (5) and an opposite second housing side (6). The first housing side (5) is provided with a cooling body (4) for removing dissipated heat. The second housing side (6) defines an alignment plane (12). The semiconductor (1) is further provided with connecting elements (3) that project from the housing (2) and that are bent in the direction towards the second housing side (6) in such a manner that they project beyond the alignment plane (12) of the second housing side (6). In their terminal regions (11), said connecting elements are adapted to receive SMD components of a printed board (13).
申请公布号 WO03065449(A3) 申请公布日期 2004.02.19
申请号 WO2002EP14107 申请日期 2002.12.12
申请人 PAPST-MOTOREN GMBH & CO KG;HORNBERGER, JOERG;PFAFF, ANDREAS 发明人 HORNBERGER, JOERG;PFAFF, ANDREAS
分类号 H01L23/433;H01L23/495;H01L25/11;H05K1/02;H05K1/18 主分类号 H01L23/433
代理机构 代理人
主权项
地址