发明名称 Low inductance circuit arrangement for power semiconductor modules
摘要 The circuit device has an electrically-insulating substrate (10) provided with relatively insulated metallized connector paths (12) with associated power semiconductor elements (13), at least 2 DC terminal leads (20a,20b) and at least one AC terminal lead (30). The DC terminal leads of opposite polarity lie in close proximity to one another, both the DC and AC terminal leads exending parallel to the substrate surface and/or the connector paths and relatively insulated from the latter and provided with surface elements (21,31) for bonding wire connections (40,41) with the semiconductor elements or the connector paths.
申请公布号 EP1389820(A2) 申请公布日期 2004.02.18
申请号 EP20030016373 申请日期 2003.07.19
申请人 SEMIKRON ELEKTRONIK GMBH & CO. KG 发明人 HEILBRONNER, HEINRICH, DR.;STOCKMEIER, THOMAS, DR.
分类号 H01L23/12;H02M7/72;H01L25/04;H01L25/07;H01L25/18;H01L27/088;H02M7/00;H02M7/04 主分类号 H01L23/12
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