发明名称 |
Semiconductor light-emitting element |
摘要 |
In a semiconductor light-emitting element, an underlayer is made of a high crystallinity Al-including semiconducting nitride material of which the FWHM is 90 seconds or below in full width at half maximum of an X-ray rocking curve. A light-emitting layer is made of a semiconducting nitride material including it least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements. The light-emitting layer can be omitted if at least one element selected from rare earth metal elements is incorporated in the underlayer.
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申请公布号 |
US6693302(B2) |
申请公布日期 |
2004.02.17 |
申请号 |
US20010035001 |
申请日期 |
2001.12.28 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
HORI YUJI;SHIBATA TOMOHIKO;TANAKA MITSUHIRO;ODA OSAMU |
分类号 |
C23C16/34;H01L21/20;H01L33/12;H01L33/32;H01L33/42;(IPC1-7):H01L27/15;H01L29/20 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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