METHOD FOR FORMING FINE PATTERN BY USING SILICON OXIDE LAYER

摘要

PURPOSE: A method for forming a fine pattern by using a silicon oxide layer is provided to prevent the damage of a photoresist pattern by forming a silicon oxide layer on the photoresist pattern. CONSTITUTION: A photoresist layer is formed on an upper surface of a material layer(110). A photoresist pattern(120) is formed by exposing and developing the photoresist layer. The first silicon oxide layer(130) is formed on each upper surface of the material layer(110) and the photoresist pattern in order to prevent the damage of the photoresist pattern(120). A material layer pattern is formed by dry-etching the material layer(110). The first silicon oxide layer(130) is formed under the temperature of 400 degrees centigrade.