Thin semiconductor layer preparing method for microelectronics, involves correcting layer thickness by simultaneously treating entire surface of layer, while locally adapting layer thickness in different regions of layer surface

摘要

The method involves acquiring a measured thickness profile of a semiconductor layer, and deducing thickness correction specifications from the measured thickness profile. Layer thickness is corrected in accordance with the specifications by simultaneously treating the entire surface of the layer, while locally adapting the layer thickness in different regions of the layer surface. An Independent claim is also included for a machine implementing thin semiconductor layer preparing method.