| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose degradation of yield can be suppressed and mounted in a high density and its manufacturing method. SOLUTION: The semiconductor device 100 includes a first semiconductor device 110 wherein plural bumps 3 are formed on its surface, and a second semiconductor device 120 wherein plural terminals 2 electrically connected with the bumps are formed on its surface and which is mounted on a region where the bumps on the surface of the first semiconductor device are not formed. The height of the second semiconductor device from the surface of the first semiconductor device is the height of the bumps or lower. The surface of the second semiconductor device where the terminal are not formed is adhered on the first semiconductor device to the surface of the first semiconductor device with an adhisive 115 to mount the second semiconductor device. COPYRIGHT: (C)2004,JPO
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