MIS SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a MIS (metal insulator semiconductor) device typified by a power MOSFET that remarkably enhances a relationship between an ON resistance and a switching time and reduces the ON resistance furthermore than that of prior arts while maintaining the high speed switching performance. SOLUTION: A trench reaching a first n+-drain region 15 from the surface of a p-base region 12 is formed to a position of the p-base region close to a gate electrode 19 at a side opposite to an n+-source region 14 across the gate electrode 19. Then a second drain region 16 used also for a drift region is formed in a way of self-alignment to the gate electrode 19 along the side wall of the trench through ion implantation of n-type impurities while using the gate electrode 19 for part of a mask. COPYRIGHT: (C)2004,JPO