| 摘要 |
PROBLEM TO BE SOLVED: To achieve a high density interconnection in sequentially stacked thin film layers of an insulating film and a copper film formed outside through-holes for through-hole plating formed in a multilayer interconnection board, and realize production of a multilayer interconnection board that is produced at low cost and has excellent heat radiation property and high frequency property. SOLUTION: In this semiconductor device, vias for connecting with an outside interconnection layer are formed on a partially extended area of lands of filled through-holes with through-hole plating in a double-sided printed board; and sequentially stacked thin film layers are formed thereon. Columnar copper bodies are formed on the through-holes, and connected with other semiconductors using a conductor having high heat conductivity. Furthermore, the interconnection area of the substrate is shielded with an insulator and a ground layer. In these production methods, filler-containing solvent-free fluid polymer precursor is heated and molten, and then supplied on the substrate using a precise constant-volume dispenser. COPYRIGHT: (C)2004,JPO
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