发明名称 |
Method for improving a physical property defect value of a gate dielectric |
摘要 |
The present invention provides a method for improving a physical property of a substrate, a method for manufacturing an integrated circuit, and an integrated circuit manufactured using the aforementioned method. In one aspect of the invention, the method for improving a physical property of a substrate includes subjecting the substrate to effects of a plasma process 830, wherein the substrate has a physical property defect value associated therewith subsequent to the plasma process. The method further includes exposing the substrate to an ultraviolet (UV) energy source 840 to improve the physical property defect value.
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申请公布号 |
US2004029391(A1) |
申请公布日期 |
2004.02.12 |
申请号 |
US20030637288 |
申请日期 |
2003.08.08 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KIRKPATRICK BRIAN K.;BRUGLER MERCER;BREASHEARS EDDIE;HOLT JON;ZABIEREK CORBETT;KHAMANKAR RAJESH |
分类号 |
H01L21/28;H01L21/3105;H01L29/51;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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