发明名称 PROCESS AND APPARATUS FOR PLATING AND WAFER WITH FEW PIT DEFECT
摘要 PROBLEM TO BE SOLVED: To provide a plating process which promotes removal of microbubbles from a wafer, inhibits pit defects, prevents malfunction of a device, etc. and improves production yield when forming wiring on the semiconductor wafer through electroplating or electroless plating, and the semiconductor wafer with few pit defect. SOLUTION: The plating process is for forming the wiring on the semiconductor wafer, etc. wherein plating is performed in a plating tank which is depressurized to below atmospheric pressure. In the process and a plating apparatus, the plating tank is depressurized by sealing the tank and exhausting the space in the upper part of the tank using a vacuum pump. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004043916(A) 申请公布日期 2004.02.12
申请号 JP20020205023 申请日期 2002.07.15
申请人 NIKKO MATERIALS CO LTD 发明人 AIBA TAMAHIRO;OKABE GAKUO
分类号 C23C18/16;C23C18/31;C25D7/12;C25D17/00;H01L21/288;(IPC1-7):C25D7/12 主分类号 C23C18/16
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