发明名称 PLASMA CHAMBER EQUIPMENT ADOPTING AUTOMATIC CAPACITANCE VARIATION APPARATUS
摘要 PURPOSE: Plasma chamber equipment adopting an automatic capacitance variation apparatus is provided to improve deposition and etch uniformity deteriorated by variation of capacitance by including an automatic capacitance varying apparatus instead of a conventional fixed shunt part. CONSTITUTION: A radio frequency(RF) generator unit as a power source for ionizing gas is connected to plasma chamber equipment, using RF power. A low frequency generator unit(40) for accelerating the positive ions generated by the RF power toward wafers is connected to a heater block on which the wafers are placed. The automatic capacitance varying apparatus automatically recovers the capacitance inside the chamber even if the capacitance of the chamber changes, functioning as a shunt part for controlling the noise of the low frequency generator unit.
申请公布号 KR20040011996(A) 申请公布日期 2004.02.11
申请号 KR20020045333 申请日期 2002.07.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, GYU SANG;KIM, JIN MAN;MIN, YEONG MIN;YANG, YUN SIK
分类号 H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/02
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