发明名称 |
Method for heat treatment of SOI wafer and SOI wafer heat-treated by the method |
摘要 |
A method for heat-treating an SOI wafer in a reducing atmosphere, characterized in that the SOI wafer is heat-treated through use of a rapid thermal annealer at a temperature within the range of 1100 DEG C to 1300 DEG C for 1 sec to 60 sec. The reducing atmosphere is preferably an atmosphere of 100% hydrogen or a mixed gas atmosphere containing hydrogen and argon. The heat treatment is preferably performed for 1 sec to 30 sec. The method eliminates COPs in an SOI layer of an SOI wafer in accordance with a hydrogen annealing method, while preventing etching of the SOI layer and a buried oxide layer. <IMAGE> |
申请公布号 |
EP0917188(A3) |
申请公布日期 |
2004.02.11 |
申请号 |
EP19980308832 |
申请日期 |
1998.10.28 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
AGA, HIROJI;KOBAYASHI, NORIHIRO;MITANI, KIYOSHI |
分类号 |
H01L21/02;H01L21/316;H01L21/322;H01L21/324;H01L21/762;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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