Ferroelectric memory device

摘要

A ferroelectric memory device includes a simple matrix type memory cell array. Provided that the maximum absolute value of a voltage applied between a first signal electrode and a second signal electrode is Vs, polarization P of a ferroelectric capacitor formed of the first signal electrode, the second signal electrode, and ferroelectric layer is within the range of 0.1P(+Vs)<P(-1/3Vs) when the applied voltage is changed from +Vs to -1/3Vs, and 0.1P(-Vs)>P(+1/3Vs) when the applied voltage is changed from -Vs to +1/3Vs.